Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

Hala H. Alhashim, Mohammed Zahed Mustafa Khan, Mohammed Abdul Majid, Tien Khee Ng, Boon S. Ooi

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm −1), suitable for applications in frequency doubled green–yellow–orange laser realisation, gas sensing, metrology etc.
Original languageEnglish (US)
Pages (from-to)1444-1445
Number of pages2
JournalElectronics Letters
Volume51
Issue number18
DOIs
StatePublished - Aug 15 2015

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