Study on SRAM soft failure using planar-view transmission electron microscopy techniques

P. Liu*, K. Li, Y. Li, C. Q. Chen, E. Er, J. Teong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Soft failure in static random access memory (SRAM), where there are several mechanisms related to it, is a kind of major obstruction to improve the yield. Transmission electron microscopy (TEM) is a powerful failure analysis tool, which has a high spatial resolution and is widely used in IC failure analysis with the shrinkage of integrated circuit to a nano-level transistor. Planar-view TEM techniques have great advantages in finding failure location and mechanism. In this paper, two kinds of soft failure root causes are identified by the planar-view TEM techniques.

Original languageEnglish (US)
Title of host publication2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs
StatePublished - 2008
Externally publishedYes
Event2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore
Duration: Jul 7 2008Jul 11 2008

Other

Other2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
CountrySingapore
CitySingapore
Period07/7/0807/11/08

ASJC Scopus subject areas

  • Engineering(all)

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