Study on cobalt salicide on patterned wafers with 0.13um CMOS technology and below

Qin Deng, Zhihong Mai*, Ran He, Jeffrey Lam, Ramesh Rao, Kun Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In 0.11 um CMOS technology development, un-desired Cobalt salicide was found to be the cause of severe yield loss. Cobalt salicide was delaminated due to both the mechanical stress on active/ shallow trench isolation (STI) and the improper Cobalt salicidation. This paper presents detailed analysis of failure mechanism. X-ray diffraction (XRD) was used for the analysis of Cobalt salicide on patterned wafers to determine whether the CoSi2 phase is present or not. Our experimental results showed that this method could be used for the analysis of Cobalt salicid on patterned wafers.

Original languageEnglish (US)
Title of host publicationProceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005
EditorsT. Chih-hang, L. Soon, C.J. Min, A. Trigg
Pages176-180
Number of pages5
StatePublished - 2005
Externally publishedYes
Event12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 - Singapore, Singapore
Duration: Jun 27 2005Jul 1 2005

Other

Other12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005
CountrySingapore
CitySingapore
Period06/27/0507/1/05

ASJC Scopus subject areas

  • Engineering(all)

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