Study of surface microstructure origin and evolution for GaAs grown on Ge/Si1-xGex/Si substrate

K. P. Chen, S. F. Yoon, Tien Khee Ng, H. Tanoto, K. L. Lew, C. L. Dohrman, E. A. Fitzgerald

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


The origin and evolution of surface microstructures in the GaAs layer grown on the Ge/Si1-xGex/Si substrate were studied. The characteristic surface microstructures are formed in pairs. By correlating the results from atomic force microscopy and cross-sectional transmission electron microscopy characterization, these paired surface microstructures are identified as {1 1 1} stacking faults that propagate at 54° with respect to the substrate surface. The stacking faults originate from the single-stepped GaAs/Ge heterointerface, as a consequence of in situ annealing of the Ge surface. The surface microstructure density becomes lower and the mean lateral size larger when the GaAs thickness is increased from 0.54 to 1.11 νm.

Original languageEnglish (US)
Article number035303
JournalJournal of Physics D: Applied Physics
Issue number3
StatePublished - Apr 9 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


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