Study of Si-Ge interdiffusion with phosphorus doping

Feiyang Cai, Dalaver H. Anjum, Xixiang Zhang, Guangrui Xia

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75
Original languageEnglish (US)
Pages (from-to)165108
JournalJournal of Applied Physics
Volume120
Issue number16
DOIs
StatePublished - Oct 28 2016

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