Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was funded by the Natural Science and Engineering Research Council of Canada (NSERC) and Crosslight Software Inc. The XRD measurements were performed in the Semiconductor Defect Spectroscopy Laboratory at Simon Fraser University. Dr. Stephen P. Smith at Evans Analytical Group is acknowledged for helpful discussions on SIMS measurements. Gary Riggott and Professor Judy L. Hoyt from Microsystems Technology Laboratories, Massachusetts Institute of Technology are acknowledged for the epitaxy growth of the samples. Professor Patricia Mooney from the Department of Physics at Simon Fraser University, Dr. Yiheng Lin and Mr. Guangnan Zhou from the Department of Materials Engineering, the University of British Columbia are acknowledged for the help in XRD measurements and helpful discussions.