We report the damage distribution induced by C2F6 and SiCl4 reactive ion etching (RIE) using quantum wells and quantum well intermixing (QWI) as probes. Photoluminescence emission at 77 K was measured both before and after rapid thermal annealing at 900°C for 30 s. Our results show that the QWI probing technique can effectively be utilized as a sensitive probe of RIE damage. A damage depth of 650 Å before annealing and blue shifts of up to 65 meV after annealing were obtained in C 2F6 RIE regions. A damage depth of 100 Å and blue shifts of up to 30 meV were observed in SiCl4 RIE regions.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)