Study of nanometer resolution resist slope for the UVIII chemically amplified resist

A. Gerardino*, M. Gentili, Enzo Di Fabrizio, R. Calarco, L. Mastrogiacomo

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

The performances of the Shipley UVIII chemically amplified resist (a positive tone) for nanostructure fabrication in silicon have been investigated. We studied the resist profile behaviour for high aspect ratio structure (ratio exceeding 1:5) with resolution down to 60 nm. The resist slope was investigated as a function of resist thickness, e-beam diameter, nominal linewidth and the development condition. Undercut profiles have been exploited for the deposition of nanometer metal lines by a lift-off technique. The metal mask allows the dry-etching of nanostructures in silicon.

Original languageEnglish (US)
Pages (from-to)201-204
Number of pages4
JournalMicroelectronic Engineering
Volume46
Issue number1
DOIs
StatePublished - Jan 1 1999
EventProceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98) - Leuven
Duration: Sep 22 1998Sep 24 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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