Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks

Ivona Z. Mitrovic, G. Simutis, W. M. Davey, Naser Sedghi, Stephen D. Hall, Vinod R. Dhanak, Ioannis Alexandrou, Qingxiao Wang, Joao Marcelo J. Lopes, Jürgen M. Schubert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

TiN/LaLuO3 (LLO) gate stacks formed by molecular beam deposition have been investigated by X-ray photoelectron spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, scanning transmission electron microscopy, electron energy loss spectroscopy and atomic force microscopy. The results indicate an amorphous structure for deposited LLO films. The band offset between the Fermi level of TiN and valence band of LLO is estimated to be 2.65 ± 0.05 eV. A weaker La-O-Lu bond and a prominent Ti2p sub-peak which relates to Ti bond to interstitial oxygen have been identified for an ultra-thin 1.7 nm TiN/3 nm LLO gate stack. The angle-dependent XPS analysis of Si2s spectra as well as shifts of La4d, La3d and Lu4d core levels suggests a silicate-type with Si-rich SiOx LLO/Si interface. Symmetrical valence and conduction band offsets for LLO to Si of 2.2 eV and the bandgap of 5.5 ± 0.1 eV have been derived from the measurements. The band alignment for ultra-thin TiN/LLO gate stack is affected by structural changes. Copyright © 2011 Published by Elsevier B.V. All rights reserved.
Original languageEnglish (US)
Title of host publicationMicroelectronic Engineering
PublisherElsevier BV
Pages1495-1498
Number of pages4
DOIs
StatePublished - Jul 2011

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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