Study of high nitrogen compositions GaNAs and GaInNAs material quality by x-ray diffraction and photoluminescence

Tien Khee Ng*, S. F. Yoon, S. Z. Wang, W. K. Loke, W. J. Fan

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

GaNAs and GaInNAs growths are subjects of considerable interest due to its technological importance in long wavelength lasers emitting within the optical-fiber communication wavelength window (1.31 - 1.55 μm). We study GaNAs and GaInNAs materials growth on (100) semi-insulating GaAs substrate with high nitrogen compositions (>2%) using a solid source molecular beam epitaxy (SSMBE) system in conjunction with a RF plasma source. GaNAs layer with high nitrogen compositions of 4.85% and 6% with good XRD peak intensities were successfully grown. GaInNAs quantum wells (QWs) were then grown with reference to the nitrogen compositions measured in the GaNAs materials to obtain nitrogen compositions > 2%. The photoluminescence (PL) peak positions of the GaInNAs QWs blueshifted after annealing at 840°C and 10min. It was found that the blueshift of PL peaks are highly dependent on nitrogen compositions.

Original languageEnglish (US)
Pages (from-to)317-322
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume693
StatePublished - Jan 1 2002
EventGaN and Related Alloys-2001 - Boston, MA, United States
Duration: Nov 26 2001Nov 30 2001

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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