Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

Mohamed T. Ghoneim, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures.
Original languageEnglish (US)
Pages (from-to)052904
JournalApplied Physics Letters
Volume107
Issue number5
DOIs
StatePublished - Aug 5 2015

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