Study of defects in p-type layers in III-nitride laser diode structures grown by molecular beam epitaxy

Xiu Huixin*, Pedro Da Costa, Matthias Kauer, Tim M. Smeeton, Stewart E. Hooper, Jonathan Heffernan, Colin J. Humphreys

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper reports on the study of defects in p-type layers in III-nitride laser structures grown by molecular beam epitaxy. Characterization of the heterostructures was carried out using atomic force microscopy and transmission electron microscopy. The results show that a high density of extended defects - possibly inversion domains - exist in the p-type cladding layers of as-grown structures with either AlGaN/GaN superlattices or bulk AlGaN cladding layers. TEM analysis of operated and aged devices does not reveal any significant structural modification of the p-type material which might be the cause of deterioration in the lasing performance or failure.

Original languageEnglish (US)
Title of host publicationAdvances in III-V Nitride Semiconductor Materials and Devices
Pages46-52
Number of pages7
StatePublished - Dec 1 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume955
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/27/0612/1/06

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Study of defects in p-type layers in III-nitride laser diode structures grown by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this