Studies on failure mechanism of Al fluoride oxide-AlxO yPz on microchip Al bondpads

Younan Hua*, Siping Zhao, Rao Ramesh, Li Kun

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Al fluoride oxide on microchip Al bondpads may cause non-stick on pad (NSOP) problem during bonding process. In this study, a failure mechanism to form Al fluoride oxide-AlxOyFz has been proposed. Based on the failure mechanism, F contamination on Al bondpads, it will chemically react with Al and form Al-F complex compound, such as [AlF 6]3. [AlF6]3- formed may become an anode and further chemical reaction from O2 and moisture (H 2O) will occur at the cathode and form the new product, OH-ions, which will undergo chemical reaction with Al to form Al(OH)3, and then become Al2O3. Finally, Al-F complex compound may further chemically react with Al2O3 to form Al fluoride oxide-AlxOyFz.

Original languageEnglish (US)
Title of host publicationICSE 2006
Subtitle of host publication2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages528-532
Number of pages5
DOIs
StatePublished - 2006
Externally publishedYes
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia
Duration: Nov 29 2006Dec 1 2006

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CountryMalaysia
CityKuala Lumpur
Period11/29/0612/1/06

ASJC Scopus subject areas

  • Engineering(all)

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