Studies of In and N composition effects on the optical properties and surface morphology of GaInNAs quantum dots grown by RF-plasma assisted MBE

K. C. Yew*, S. F. Yoon, Z. Z. Sun, Tien Khee Ng, W. K. Loke, S. Z. Wang, W. J. Fan

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Self-assembled GaInNAs quantum dots (QD) were fabricated on GaAs (001) substrate by solid source molecular beam epitaxy (SSMBE) equipped with a RF nitrogen plasma source. The surface morphology was investigated using atomic-force microscopy (AFM), and the photoluminescence (PL) of the QDs was measured at low temperature (5K). Through these measurements, the effect of indium and nitrogen compositions on the island density, island size, and optical properties were studied. The experiment was carried out with indium and nitrogen composition ranges of 30%-70% and 0.4%-0.8%, respectively. Using high indium composition, an island density of 1 × 1011/cm2 was obtained in a single layer of GaInNAs QDs. The AFM results showed that the island size of the QDs is in the range of 20-40mn with an average height of 5-16nm and the highest island density of 1×1011/cm2 has been achieved. Low temperature (5K) photoluminescence (PL) wavelength of 1.10 μm to 1.54 μm was detected from these samples.

Original languageEnglish (US)
Pages (from-to)577-580
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - Jan 1 2002
Event14th Indium Phosphide and Related Materials Conference - Stockholm, Sweden
Duration: May 12 2002May 16 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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