Structure studies of synthetic diamond thin films by x-ray diffraction

Fangqing Zhang*, Zhizhong Song, Jingqi Li, Guanghua Chen, Xiangliu Jiang, Qiuzi Cong

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    18 Scopus citations

    Abstract

    The depth profile of the structure of synthetic diamond thin films prepared by the d.c. arc discharge plasma chemical vapour deposition (CVD) method has been investigated by sample-tilting X-ray diffraction. The results show that, at first, a layer of carbide is deposited which saturates the substrate surface. For a single-crystal silicon (c-Si) substrate, the compound is silicon carbide (SiC); for a molybdenum wafer substrate, the compound is molybdenum carbide (Mo2C). A diamond film grows on the carbide layer. The orientation of the crystal grains with depth in the polycrystalline diamond thin films is irregular. The main contaminant in diamond thin films prepared by the d.c. arc discharge plasma CVD method is tungsten carbide (WC).

    Original languageEnglish (US)
    Pages (from-to)123-128
    Number of pages6
    JournalThin Solid Films
    Volume199
    Issue number1
    DOIs
    StatePublished - Apr 1 1991

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

    Fingerprint Dive into the research topics of 'Structure studies of synthetic diamond thin films by x-ray diffraction'. Together they form a unique fingerprint.

    Cite this