Structural, optical, and electrical properties of silicon nanowires for solar cells

Thomas Stelzner*, Vladimir A. Sivakov, Andreas Berger, Björn Hoffmann, Stefaan De Wolf, Christophe Ballif, Dongfeng Zhang, Johann Michler, Silke H. Christiansen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We investigated Si nanowires (SiNWs) fabricated by wet etching and chemical vapor deposition (CVD), and core-shell structures, formed by depositing silicon layers around the SiNWs, with respect to their crystallinity, the doping level, and the influence of surface passivation on carrier lifetime. The effects expected to be critical to improve the performance of nanowire-based solar cells are discussed.

Original languageEnglish (US)
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages275-276
Number of pages2
DOIs
StatePublished - May 5 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: Jan 3 2010Jan 8 2010

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period01/3/1001/8/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Structural, optical, and electrical properties of silicon nanowires for solar cells'. Together they form a unique fingerprint.

Cite this