Structural and magnetic properties of Fe-Ge layer produced by Fe ion-implantation into germanium

R. Venugopal*, B. Sundaravel, I. H. Wilson, F. W. Wang, Xixiang Zhang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Fe ions were implanted into Ge (110) using a metal vapor vacuum arc ion source. The samples were characterized by Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and superconducting quantum interference device magnetometry. The crystalline quality of the implanted layer was identified by RBS random/channeling measurements. The depth profile of the implanted Fe ions was obtained by AES. Low dose implantation causes formation of Fe-Ge precipitates whereas high dose implantation causes formation of Fe precipitates in the implanted layer as confirmed by TEM and XPS measurements. Magnetic measurements show the superparamagnetism of the Fe and Fe-Ge clusters at high temperatures.

Original languageEnglish (US)
Pages (from-to)1410-1416
Number of pages7
JournalJournal of Applied Physics
Volume91
Issue number3
DOIs
StatePublished - Feb 1 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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