Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

Jhonathan Prieto Rojas, Muhammad Mustafa Hussain, Galo T. Sevilla

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.
Original languageEnglish (US)
Pages (from-to)064102
JournalApplied Physics Letters
Volume102
Issue number6
DOIs
StatePublished - Feb 12 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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