A two-contact extraordinary magnetoresistance (EMR) device has been fabricated and characterized at various temperatures under magnetic fields applied in different directions. Large performance variations across the temperature range have been found, which are due to the strong dependence of the EMR effect on the mobility. The device shows the highest sensitivity of 562ω/T at 75 K with the field applied perpendicularly. Due to the overlap between the semiconductor and the metal shunt, the device is also sensitive to planar fields but with a lower sensitivity of about 20 to 25% of the one to perpendicular fields. © 2012 The Japan Society of Applied Physics.
ASJC Scopus subject areas
- Physics and Astronomy(all)