Strong influence of SiO2 thin film on properties of GaN epilayers

X. C. Wang*, S. J. Xu, S. J. Chua, Kun Li, X. H. Zhang, Z. H. Zhang, K. B. Chong, X. Zhang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

In this letter, we report strong degradation of photoluminescence (PL) performance of GaN epilayers due to SiO2 layers that were deposited on GaN surfaces by electron-beam evaporation. Secondary ion mass spectrometry measurements show that the oxygen concentration of GaN with SiO2 layers is one order of magnitude more than that of as-grown GaN. This fact indicates that oxygen can very easily replace nitrogen in GaN. It was also found that rapid thermal processing can recover and improve the optical quality of GaN with SiO2 layer. As a reference, SixNy was found to have little effect on PL performance of GaN.

Original languageEnglish (US)
Pages (from-to)818-820
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number6
DOIs
StatePublished - Feb 8 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Strong influence of SiO<sub>2</sub> thin film on properties of GaN epilayers'. Together they form a unique fingerprint.

Cite this