Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells

Guan Sun*, Ruolin Chen, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate that as the period of multiple InGaN/GaN quantum wells is increased from 1 to 16, photoluminescence intensity exhibits strong saturation whereas output power of broadband THz pulses is scaled up superlinearly.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2012
StatePublished - 2012
Externally publishedYes
EventCLEO: Science and Innovations, CLEO_SI 2012 - San Jose, CA, United States
Duration: May 6 2012May 11 2012

Other

OtherCLEO: Science and Innovations, CLEO_SI 2012
CountryUnited States
CitySan Jose, CA
Period05/6/1205/11/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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