Strain relief InGaN/GaN MQW micro-pillars for high brightness LEDs

Chao Shen, Dong Kyu Cha, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Micro-structured group-III-nitrides are considered as promising strain relief structures for high efficiency solid state lighting. In this work, the strain field in InGaN/GaN multi-quantum wells (MQWs) micro-pillars is investigated using micro-Raman spectroscopy and the design of micro-pillars were studied experimentally. We distinguished the strained and strain-relieved signatures of the GaN layer from the E2 phonon peak split from the Raman scattering signatures at 572 cm-1 and 568 cm-1, respectively. The extent of strain relief is examined considering the height and size of micro-pillars fabricated using focused ion beam (FIB) micro-machining technique. A significant strain relief can be achieved when one micro-machined through the entire epi-layers, 3 μm in our study. The dependence of strain relief on micro-pillar diameter (D) suggested that micro-pillar with D < 3 μm showed high degree of strain relief. Our results shed new insights into designing strain-relieved InGaN/GaN microstructures for high brightness light emitting diode arrays. © 2013 IEEE.
Original languageEnglish (US)
Title of host publication2013 Saudi International Electronics, Communications and Photonics Conference
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)9781467361958
DOIs
StatePublished - Jul 11 2013

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