Strain-induced changes to the electronic structure of germanium

H. A. Tahini, Alexander I. Chroneos, Robin W. Grimes, Udo Schwingenschlögl, Athanasios Dimoulas Dimoulas

Research output: Contribution to journalArticlepeer-review

73 Scopus citations

Abstract

Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.
Original languageEnglish (US)
Pages (from-to)195802
JournalJournal of Physics: Condensed Matter
Volume24
Issue number19
DOIs
StatePublished - Apr 17 2012

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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