STEM study of interfacial reaction at HfxAl1-xO y/Si interfaces

J. Y. Dai*, Kun Li, P. F. Lee, X. Zhao, S. Redkar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Hfx(Al1-xOy thin films were deposited by pulsed-laser deposition (PLD) on p-type (001) Si substrates. Interfacial reaction at HfxAl1-xOy/Si interfaces was studied by scanning transmission electron microscopy (STEM) using high-angle annular dark field imaging technique and the energy dispersive X-ray (EDX) line scan analysis. The results showed that the interfacial reaction is due to Hf diffusion into the Si substrate forming Hf suicide. The presence of Al in the HfxAl1-xOy films was found to be responsible for the Hf suicide formation and it showed that increasing of Al content in the films reduced the interfacial reaction. Therefore, high-quality Hf xAl1-xOy films possessing a reaction-free interface with Si may be obtained by optimizing the growth condition.

Original languageEnglish (US)
Pages (from-to)114-117
Number of pages4
JournalThin Solid Films
Volume462-463
Issue numberSPEC. ISS.
DOIs
StatePublished - Sep 1 2004

Keywords

  • HfAlO
  • High-k gate dielectric
  • Interfacial structure
  • STEM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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