Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact

Woojin Park, Jung-Wook Min, Sohail F. Shaikh, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Molybdenum disulphide (MoS2) is an emerging 2-dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide (TiO2) interfacial layer between contact metal and MoS2 channel is suggested to achieve more stable performances. The reduced threshold voltage (VTH) shift and reduced series resistance (RSD) were simultaneously achieved.
Original languageEnglish (US)
Pages (from-to)1700534
Journalphysica status solidi (a)
Volume214
Issue number12
DOIs
StatePublished - Sep 7 2017

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