Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue-green laser diodes

M. Behringer*, Kazuhiro Ohkawa, V. Großmann, H. Heinke, K. Leonardi, M. Fehrer, D. Hommel, M. Kuttler, M. Strassburg, D. Bimberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Thermally induced Cd diffusion in CdZn(S)Se/Zn(S)Se multi-quantum well-structures has been investigated in order to study point defects and their generation in II-VI/III-V heterostructures and to find a thermally stable quantum well design. Samples were annealed in Zn atmosphere and diffusion coefficients were determined with secondary ion mass spectroscopy. Cd diffusion coefficients as low as 1.2 ×10-18 cm2/s at T = 575°C were found in a CdZnSSe/ZnSSe structure. Samples annealed in Zn atmosphere indicate a higher stability of CdZnSSe than of CdZnSe, but samples annealed in N2 seem to show the opposite tendency. Laser diodes show low threshold current densities of 400 A/cm2 for both kinds of wells.

Original languageEnglish (US)
Pages (from-to)580-584
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
StatePublished - Jan 1 1998

Keywords

  • Cd diffusion
  • CdZnSSe
  • Degradation
  • II-VI laser diodes
  • Thermal stability

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue-green laser diodes'. Together they form a unique fingerprint.

Cite this