Spin-Orbit Torque Driven Multi-State Device for Memory Applications

Selma Amara, Ulan Myrzakhan, Abdulmohsen Alsaui, Meshal Alawein, Hossein Fariborzi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the design, fabrication and measurement of a spin-orbit torque (SOT) driven multi-state memory. The multi-state memory is based on a 3-nm thick Ni81Fe19 (Py) patterned in the shape of four intersecting ellipses (octagram). Writing is performed by injecting a charge current along one of the Pt wires, which generates a transverse pure spin current capable of switching Py between its states. Information is read through a magnetic tunnel junction (MTJ) using four-point technique.
Original languageEnglish (US)
Title of host publication2019 Electron Devices Technology and Manufacturing Conference (EDTM)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages371-373
Number of pages3
ISBN (Print)9781538665084
DOIs
StatePublished - Mar 2019

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