Spin diffusion in bulk GaN measured with MnAs spin injector

Shafat Jahangir, Fatih Dogan, Hyun Kum, Aurelien Manchon, Pallab Bhattacharya

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.
Original languageEnglish (US)
JournalPhysical Review B
Volume86
Issue number3
DOIs
StatePublished - Jul 16 2012

Fingerprint Dive into the research topics of 'Spin diffusion in bulk GaN measured with MnAs spin injector'. Together they form a unique fingerprint.

Cite this