Spatial bandgap tuning in long wavelength InAs quantum dots-in-well laser structure

Yang Wang*, Clara E. Dimas, Hery S. Djie, Boon Ooi, Gerard Dang, Wayne Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We employed the postgrowth impurity-free vacancy diffusion technique to selectively tune the bandgap of the InAs/InGaAlAs dots-in-well laser structure grown on (100) InP substrate. A blueshift up to 170 nm with a significant decrease in the photoluminescence linewidth has been observed. Spatial control of the bandgap shifts has been achieved using SiO 2 and Si xN y layers as annealing caps. A differential wavelength shift of 76 nm has been observed after a rapid thermal annealing step at 750°C for 30 s. In contrast to most reported results in other material systems using similar process, we observed a larger bandgap shift from the Si xN y capped samples than from the SiO 2 capped samples. Our theoretical calculation indicates that the unusual intermixing behavior in this material system is governed by different interdiffusion rates of group-III atoms.

Original languageEnglish (US)
Title of host publicationProgress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
Pages97-102
Number of pages6
StatePublished - Aug 23 2006
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 1 2005

Publication series

NameMaterials Research Society Symposium Proceedings
Volume891
ISSN (Print)0272-9172

Other

Other2005 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0512/1/05

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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