Solution-processed ZnO nanoparticle-based transistors via a room-temperature photochemical conversion process

Yen Hung Lin, Hendrik Faber, Stephan Rossbauer, Thomas Anthopoulos*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

We report on zinc oxide (ZnO) nanoparticle-based transistors in which the solution-processed semiconducting layers are post-treated using UV light irradiation instead of high temperature annealing. Field-effect transistors based on these ZnO nanoparticle films exhibit n-channel characteristics with electron mobilities on the order of ∼10-3 cm2 V -1s-1-a value comparable to that obtained from devices thermally annealed at 250 °C. Because of the photochemical nature of the process, the sample temperature during UV irradiation remains low and close to room temperature. This enables facile fabrication of ZnO transistors onto inexpensive, temperature-sensitive substrate materials such as plastic.

Original languageEnglish (US)
Article number193516
JournalApplied Physics Letters
Volume102
Issue number19
DOIs
StatePublished - May 13 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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