We report on zinc oxide (ZnO) nanoparticle-based transistors in which the solution-processed semiconducting layers are post-treated using UV light irradiation instead of high temperature annealing. Field-effect transistors based on these ZnO nanoparticle films exhibit n-channel characteristics with electron mobilities on the order of ∼10-3 cm2 V -1s-1-a value comparable to that obtained from devices thermally annealed at 250 °C. Because of the photochemical nature of the process, the sample temperature during UV irradiation remains low and close to room temperature. This enables facile fabrication of ZnO transistors onto inexpensive, temperature-sensitive substrate materials such as plastic.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)