Solution processed self-assembled monolayer gate dielectrics for low-voltage organic transistors

James Ball, Paul H. Wöbkenberg, Florian Colléaux, Floris B. Kooistra, Jan C. Hummelen, Donal D.C. Bradley, Thomas D. Anthopoulos

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Low-voltage organic transistors are sought for implementation in high volume low-power portable electronics of the future. Here we assess the suitability of three phosphonic acid based self-assembling molecules for use as ultra-thin gate dielectrics in low-voltage solution processable organic field-effect transistors. In particular, monolayers of phosphonohexadecanoic acid in metal-monolayer-metal type sandwich devices are shown to exhibit low leakage currents and high geometrical capacitance comparable to previously demonstrated self-assembled monolayer (SAM) type dielectrics [1, 2] but with a higher surface energy. The improved surface energy characteristics enable processing of a wider range of organic semiconductors from solution. Transistors based on a number of solution-processed organic semiconductors with operating voltages below 2 V are also demonstrated. © 2009 Materials Research Society.
Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages20-25
Number of pages6
Volume1114
StatePublished - Dec 1 2008
Externally publishedYes
Event2008 MRS Fall Meeting - Boston, MA, United States
Duration: Dec 1 2008Dec 5 2008

Other

Other2008 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period12/1/0812/5/08

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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