Solar-blind photodetectors for harsh electronics

Dung Sheng Tsai, Wei Cheng Lien, Der Hsien Lien, Kuan Ming Chen, Meng Lin Tsai, Debbie G. Senesky, Yueh Chung Yu, Albert P. Pisano, Jr-Hau He*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

69 Scopus citations

Abstract

We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as - 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 10 13  cm −2 of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as - 110 ms (the rise time) and - 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.

Original languageEnglish (US)
Pages (from-to)1-5
Number of pages5
JournalScientific Reports
Volume4
DOIs
StatePublished - Sep 11 2013

ASJC Scopus subject areas

  • General

Cite this