Tin dioxide (Sn O2) is widely used as sensing material in metal-oxides gas sensors. In this work we present two lithographic approaches for Sn O2 patterning, an additive process and a subtractive one. In the first case patterns of Sn O2 nanowires are successfully fabricated and exploited as sensing element in working devices; responses to several testing gases are satisfactorily improved with respect to continuous film devices. Regarding the subtractive process, we present reactive ion etching of Sn O2 based on C F4 H2 gas mixture. Dependence of etch rate upon H2 concentration and effects due to Ar additions to plasma are investigated; results are discussed and a possible etching reaction is proposed, but further developments are required to increase the etch rate.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Nov 1 2005|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering