SnO2 lithographic processing for nanopatterned gas sensors

P. Candeloro*, E. Comini, C. Baratto, G. Faglia, G. Sberveglieri, R. Kumar, A. Carpentiero, Enzo Di Fabrizio

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Tin dioxide (Sn O2) is widely used as sensing material in metal-oxides gas sensors. In this work we present two lithographic approaches for Sn O2 patterning, an additive process and a subtractive one. In the first case patterns of Sn O2 nanowires are successfully fabricated and exploited as sensing element in working devices; responses to several testing gases are satisfactorily improved with respect to continuous film devices. Regarding the subtractive process, we present reactive ion etching of Sn O2 based on C F4 H2 gas mixture. Dependence of etch rate upon H2 concentration and effects due to Ar additions to plasma are investigated; results are discussed and a possible etching reaction is proposed, but further developments are required to increase the etch rate.

Original languageEnglish (US)
Pages (from-to)2784-2788
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number6
DOIs
StatePublished - Nov 1 2005

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'SnO<sub>2</sub> lithographic processing for nanopatterned gas sensors'. Together they form a unique fingerprint.

Cite this