Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

Shafat Jahangir, Thomas Frost, Arnab Hazari, Lifan Yan, Ethan Stark, Trevor LaMountain, Joanna M. Millunchick, Boon S. Ooi, Pallab Bhattacharya

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).
Original languageEnglish (US)
Pages (from-to)071108
JournalApplied Physics Letters
Volume106
Issue number7
DOIs
StatePublished - Feb 16 2015

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