SiSn diodes: Theoretical analysis and experimental verification

Aftab M. Hussain, Nimer Wehbe, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We report a theoretical analysis and experimental verification of change in band gap of silicon lattice due to the incorporation of tin (Sn). We formed SiSn ultra-thin film on the top surface of a 4 in. silicon wafer using thermal diffusion of Sn. We report a reduction of 0.1 V in the average built-in potential, and a reduction of 0.2 V in the average reverse bias breakdown voltage, as measured across the substrate. These reductions indicate that the band gap of the silicon lattice has been reduced due to the incorporation of Sn, as expected from the theoretical analysis. We report the experimentally calculated band gap of SiSn to be 1.11 ± 0.09 eV. This low-cost, CMOS compatible, and scalable process offers a unique opportunity to tune the band gap of silicon for specific applications.
Original languageEnglish (US)
Pages (from-to)082111
JournalApplied Physics Letters
Volume107
Issue number8
DOIs
StatePublished - Aug 24 2015

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