Single transverse mode photonic crystal VCSEL with trench patterning

Mohd Sharizal Alias, Sahbudin Shaari

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Single transverse mode control is achieved for multimode GaAs-based VCSEL by utilizing photonic crystal design and etched trench structure. Theoretical analysis is initially performed for photonic crystal design with various lattice constant and air holes diameter. The fabricated photonic crystal VCSEL with etched trench structure exhibits single mode output power of 0.7 mW, threshold current of 3.5 mA, slope efficiency of 0.10 W/A, and continuous single mode output spectrum throughout a wide operating current range. Comparison of typical oxide VCSEL, trench oxide VCSEL, and photonic crystal oxide VCSEL employing trench structure is presented. By combining photonic crystal and trench structure, single transverse mode operation of photonic crystal VCSEL can be much more strictly controlled.

Original languageEnglish (US)
Title of host publication2010 International Conference on Photonics, ICP2010
DOIs
StatePublished - 2010
Externally publishedYes
Event2010 1st International Conference on Photonics, ICP2010 - Langkawi, Kedah, Malaysia
Duration: Jul 5 2010Jul 7 2010

Other

Other2010 1st International Conference on Photonics, ICP2010
CountryMalaysia
CityLangkawi, Kedah
Period07/5/1007/7/10

Keywords

  • GaAs
  • Laser diode
  • Photonic crystal
  • VCSEL

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this