Single nanoflake-based PtSe2p-n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes

Sikandar Aftab, Ms Samiya, Hafiz Mansoor Ul Haq, Muhammad Waqas Iqbal, Muhammad Hussain, Saqlain Yousuf, Atteq Ur Rehman, Muhammad Usman Khan, Zaheer Ahmed, Muhammad Zahir Iqbal

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3 Scopus citations

Abstract

Here, novel lateral PtSe2 p-n junctions are fabricated based on the PtSe2/BN/graphene (Gr) van der Waals heterostructures upon the illumination of visible light via the optical excitation of the mid-gap point defects in hexagonal boron nitride (h-BN). A stable photo doping effect was achieved for tuning the polarity of PtSe2-based field-effect transistors (FETs). The constructed diodes display excellent rectifying performance, with a rectification ratio of up to ∼1.0 × 105 and an ideality factor of ∼1.3. Distinctive self-biased photovoltaic behavior was detected, specifically in the positive open-circuit voltage (Voc = 0.32 V) at zero source-drain current (Ids), and also the negative short-circuit current (Isc = 16.2 nA) at zero source-drain voltage (Vds) generated for the p-n diode state upon the illumination of incident light (600 nm, 40 mW cm-2). Moreover, output Voc switching behavior was achieved for the p-n diode state by switching the input light signal on and off, with a photoresponse over the broadband spectral range of 200-1200 nm. Various photovoltaic parameters were also measured. Also, using this elegant approach, homoinverters were fabricated that reached a maximum gain of ∼30 (VDD = 2 V). These findings pave the way to developing self-biased photovoltaic devices by exploiting 2D noble metal dichalcogenide materials. This journal is
Original languageEnglish (US)
Pages (from-to)199-207
Number of pages9
JournalJournal of Materials Chemistry C
Volume9
Issue number1
DOIs
StatePublished - 2021

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