Single-layer MoS 2 phototransistors

Zongyou Yin, Hai Li, Hong Li, Lin Jiang, Yumeng Shi, Yinghui Sun, Gang Lu, Qing Zhang, Xiaodong Chen, Hua Zhang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2640 Scopus citations

Abstract

A new phototransistor based on the mechanically exfoliated single-layer MoS 2 nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS 2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS 2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

Original languageEnglish (US)
Pages (from-to)74-80
Number of pages7
JournalACS Nano
Volume6
Issue number1
DOIs
StatePublished - Jan 24 2012

Keywords

  • MoS
  • photocurrent
  • photoresponsivity
  • photoswitching
  • phototransistors
  • single-layer

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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