Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency

Meng-Lin Tsai, Ming-yang Li, Jose Ramon Duran Retamal, Kai-Tak Lam, Yung-Chang Lin, Kazu Suenaga, Lih-Juann Chen, Gengchiau Liang, Lain-Jong Li, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

The recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high-efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy-free 2D monolayer WSe-MoS lateral p-n heterojunction are explores. The PV devices show an extraordinary power conversion efficiency of 2.56% under AM 1.5G illumination. The large surface active area enables the full exposure of the depletion region, leading to excellent omnidirectional light harvesting characteristic with only 5% reduction of efficiency at incident angles up to 75°. Modeling studies demonstrate the PV devices comply with typical principles, increasing the feasibility for further development. Furthermore, the appropriate electrode-spacing design can lead to environment-independent PV properties. These robust PV properties deriving from the atomically sharp lateral p-n interface can help develop the next-generation photovoltaics.
Original languageEnglish (US)
Pages (from-to)1701168
JournalAdvanced Materials
Volume29
Issue number32
DOIs
StatePublished - Jun 26 2017

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