Single and Multiple Longitudinal Wavelength Generation in Green Diode Laser

Md Hosne Mobarok Shamim, Tien Khee Ng, Boon S. Ooi, Mohammed Zahed Mustafa Khan

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Single and multiple wavelength laser systems are presented that employ self-injection locked InGaN/GaN green laser diodes in an external cavity configuration with a partially reflective mirror. A stable and simultaneous locking of up to four longitudinal Fabry–Perot modes of the system cavity is demonstrated with appreciable signal-to-noise-ratio of ∼13 dB and average mode linewidth of ∼150 pm. The multi-wavelength spectrum exhibited a flat-top emission with nearly equal power distribution among the modes and an analogous mode spacing of ∼0.5 nm. This first demonstration of multi-wavelength generation source is highly attractive in a multitude of cross-disciplinary field applications besides asserting the prospects of narrow wavelength spaced multiplexed visible light communication. Moreover, an extended two-stage self-injection locked near single wavelength visible laser system is also presented. An ultra-narrow linewidth of ∼34 pm is realized at 525.05 nm locked wavelength from this innovative system, with ∼20 dB side-mode-suppression-ratio; thus signifying a paradigm shift toward semiconductor lasers for near single lasing wavelength generation, which is presently dominated by other kinds of laser technologies.
Original languageEnglish (US)
Pages (from-to)1-7
Number of pages7
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume25
Issue number6
DOIs
StatePublished - 2019

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