Simulation study of a 3-D device integrating FinFET and UTBFET

Hossain M. Fahad, Chenming Hu, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

By integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate FinFETs with unprecedented levels of chip-area efficiency. This makes it suitable for ultralarge-scale integration high-performance logic at and beyond the 10-nm technology node.
Original languageEnglish (US)
Pages (from-to)83-87
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume62
Issue number1
DOIs
StatePublished - Jan 2015

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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