Simulation of high power GaInNAs-GaNAs double quantum-well laser diodes for raman amplifier pumping

M. Faiez Ali*, M. Kamil Abd-Rahman, M. Salleh Mohd Deni, M. S. Alias

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present theoretical analysis via simulations on high power GaInNAs-GaNAs quantum-well (QW) broad area laser diode operated in the 1.204-1.242 1m wavelength regime.The structure is based on previous other group experimental work.Simulation design is based on 2D cross section which is treated as perpendicular to the optical axis and lasing direction.We strongly believed that the increased number of quantum wells has leading effects on the increment of the optical confinement factor (OCF) as compared to increment of nitrogen doping.A maximum total power output of more than 4.5W and lasing spectrum around 1242nm is obtained for the proposed structure.The device shows potential application to be used as pumping source for Raman amplifiers.

Original languageEnglish (US)
Title of host publicationPIERS 2012 Kuala Lumpur - Progress in Electromagnetics Research Symposium, Proceedings
Pages1075-1079
Number of pages5
StatePublished - 2012
Externally publishedYes
EventProgress in Electromagnetics Research Symposium, PIERS 2012 Kuala Lumpur - Kuala Lumpur, Malaysia
Duration: Mar 27 2012Mar 30 2012

Other

OtherProgress in Electromagnetics Research Symposium, PIERS 2012 Kuala Lumpur
CountryMalaysia
CityKuala Lumpur
Period03/27/1203/30/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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