Simulation of characteristics of broadband quantum dot lasers

C. L. Tan, Y. Wang, H. S. Djie, Boon Ooi

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Authors theoretically present the characterization of the multiple states broadband InGaAs/GaAs quantum-dot lasers that agrees well with the measured data. Based on the derived model, this new class of semiconductor laser is further characterized theoretically to gain an idea of the derivative characteristic such as linewidth enhancement factor in providing a picture of the competency of this novel device for diverse applications.

Original languageEnglish (US)
Pages (from-to)391-395
Number of pages5
JournalOptical and Quantum Electronics
Volume40
Issue number5-6
DOIs
StatePublished - Apr 1 2008

Keywords

  • Linewidth enhancement factor
  • Quantum dot laser
  • Ultra-broad lasing emission

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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