Simulation and experiment of light trapping ability of periodic si nanowires

Hsin Ping Wang, Kun Tong Tsai, Kun Yu Lai, Yi Ruei Lin, Yuh Lin Wang, Jr-Hau He*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate three methods for the fabrication of large scale ordered silicon nanorwires arrays using reactive ion etching (RIE) or metal-assisted chemical etching though colloidal lithography or anodic aluminum oxide (AAO) templates. Si NWAs with desirable diameters could be obtained by shrinking the sizes of colloidal lithography or the pore sizes of AAO templates. The reflection can be eliminated effectively over broadband regions by controlled NWAs; i.e., the wavelength-averaged total reflectance is decreased to 10.0 % at the wavelengths of 200-850 nm. The resulting nanostructures might have great potential applications in photovoltaics.

Original languageEnglish (US)
Title of host publicationNanophotonics, Nanoelectronics and Nanosensor, N3 2013
StatePublished - Nov 21 2013
EventNanophotonics, Nanoelectronics and Nanosensor, N3 2013 - Wuhan, China
Duration: May 25 2013May 26 2013

Publication series

NameNanophotonics, Nanoelectronics and Nanosensor, N3 2013

Other

OtherNanophotonics, Nanoelectronics and Nanosensor, N3 2013
CountryChina
CityWuhan
Period05/25/1305/26/13

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

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