Simplified manufacturable band edge metal gate solution for NMOS without a capping layer

H. R. Harris, Husam Niman Alshareef, H. C. Wen, S. Krishnan, K. Choi, H. Luan, D. Heh, C. S. Park, H. B. Park, Muhammad Mustafa Hussain, B. S. Ju, P. D. Kirsch, S. C. Song, P. Majhi, B. H. Lee, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

We describe an NMOS band edge solution that uses a metal gate doped with Lanthanide elements to achieve work functions as low as 4.05eV The capping interlayers used in previous works are no longer necessary, and metal gate implementation became much simpler. Using this electrode, low Vth value and high mobility suitable for high performance devices are achieved at a practical EOT 0f 8Å.

Original languageEnglish (US)
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
StatePublished - Dec 1 2006
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: Dec 10 2006Dec 13 2006

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2006 International Electron Devices Meeting, IEDM
CountryUnited States
CitySan Francisco, CA
Period12/10/0612/13/06

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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