Simple MOS transistor-based realization of fractional-order capacitors

Mohammed E. Fouda, A. AboBakr, A. S. Elwakil, A. G. Radwan, A. M. Eltawil

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new second-order MOS transistor based circuit block approximating the behavior of a fractional-order capacitor is proposed. The circuit is modular and therefore the order of the approximation can be increased by more stages of the same circuit in cascade or in parallel. Simulation results using a TSMC 65nm CMOS technology are provided and show less than 2o of phase error in two decades around the center frequency of the approximation. Experimental results of realized fractional-order capacitors and of a fractional-order relaxation oscillator are also shown.
Original languageEnglish (US)
Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781728103976
DOIs
StatePublished - Jan 1 2019
Externally publishedYes

Fingerprint Dive into the research topics of 'Simple MOS transistor-based realization of fractional-order capacitors'. Together they form a unique fingerprint.

Cite this