Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.
|Original language||English (US)|
|Title of host publication||2010 35th IEEE Photovoltaic Specialists Conference|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||5|
|State||Published - Jun 2010|