Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

Hossain M. Fahad, Casey Smith, Jhonathan Prieto Rojas, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

89 Scopus citations

Abstract

We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)4393-4399
Number of pages7
JournalNano Letters
Volume11
Issue number10
DOIs
StatePublished - Oct 12 2011

ASJC Scopus subject areas

  • Bioengineering
  • Materials Science(all)
  • Chemistry(all)
  • Mechanical Engineering
  • Condensed Matter Physics

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