Silicon heterojunction solar cell with passivated hole selective MoO x contact

Corsin Battaglia, Silvia Martín De Nicolás, Stefaan De Wolf, Xingtian Yin, Maxwell Zheng, Christophe Ballif, Ali Javey*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

253 Scopus citations

Abstract

We explore substoichiometric molybdenum trioxide (MoOx, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO x, we observe a substantial gain in photocurrent of 1.9 mA/cm 2 in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

Original languageEnglish (US)
Article number113902
JournalApplied Physics Letters
Volume104
Issue number11
DOIs
StatePublished - Mar 17 2014
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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