Silicon germanium mask for deep silicon etching

Mohamed Serry (Inventor), Andrew Rubin (Inventor), Mohamed Refaat (Inventor), Sherif Sedky (Inventor), Mohammad Abdo (Inventor)

Research output: Patent

Abstract

Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.
Original languageEnglish (US)
Patent numberUS 8791021 B2
StatePublished - Jul 29 2014

Bibliographical note

KAUST Repository Item: Exported on 2019-02-13

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