Si/Ge hetero-structure nanotube tunnel field effect transistor

Amir Hanna, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd-=-1-V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60-mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5-V.
Original languageEnglish (US)
Pages (from-to)014310
JournalJournal of Applied Physics
Volume117
Issue number1
DOIs
StatePublished - Jan 7 2015

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